top of page

CUTTING-EDGE R&D

Services
Design Services, Memory, DRAM, SRAM, Emerging NVM, Standard Cell, Testsite Development, SKILL

DESIGN SERVICES

IN-HOUSE IC DEVELOPMENT

Assessment and Planning

Custom Analog, Digital & Mixed Signal Design

Memory (DRAM, SRAM, Emerging NVM)

Testsite Development & Automation

Standard Cell Library 

Design Synthesis & Verification 

Physical Design & Integration

Testing & Qualification Support

Experience in all CMOS technology nodes from 1um-7nm FINFET. 

R&D RESOURCES

ENGINEERING EXPERTISE WHEN AND WHERE YOU NEED THEM

Need to expand your R&D team? Bring our experts into your project. We offer short and long-term technical resource contracts that will help you achieve greater innovation success without the risk and commitment. 

We are not your average contracting company. Our track record of long term employee retention, excellent benefits and training programs guarantees our clients a consistent quality experience from all of our staff members.  

NEXT-GEN COMPUTING

BEYOND VON NEUMANN AND MOORE'S LAW 

We are working on exciting new patent-pending architectures that will provide our clients robust ultra-high performance at lower power to meet our clients growing data processing needs.

Today's cutting-edge technology development requires diverse expertise and a collaborative team so we are always looking for innovation partners in applications ranging from low-power autonomous navigation, bio-engineering and artificial intelligence through IoT and security data management. 

Succeed with our expertise and unmatched commitment to you and your innovation goals
Industries we support
Clients and Suppliers
Markets
Clients

Contact Us

Need application specific design work, R&D 

resources or want to meet with us to discuss your unique needs? 

Email us to "info at greenmountainsemi dot com". Or just pick up the phone and call us at
+1 802-343-8175.

Green Mountain Semiconductor Inc. 

28 Howard St, Suite 301
Burlington, Vermont 05401

Telephone: (+1) 802-343-8175

Contact Us
bottom of page