High-Performance Computing
Green Mountain Semiconductor brings a sophisticated expertise in memory and high speed I/Os design.
This allows to maximize in-memory computation with the aim to reduce power and increase performance and leverage the high parallelism inherent in the memory architectures.
Green Mountain has the know-how to develop a full-fledged PHY on advanced technology nodes for the specific purpose of enabling high-speed data exchanges between memories and the CPU
Examples of completed projects
-
Commodity DRAM design (LPDDR, DDR up to 2GB, 6.4GB/s)
-
SRAM macro design up to 128MBit
-
Emerging memories (STT MRAM, Phase Change Memory)
-
Memory PHY design in various technology nodes down to 7nm
-
Development of product prototypes (256M LPDDR2-NV and 32M SPI Flash-replacement) with error correction code (ECC)
-
Specialty memory R&D (ultra low temperature DRAM circuits)
In-Memory
-
In-memory computing based on SRAM, DRAM and Phase Change Memory
-
Self-contained in-memory neuromorphic compute solution
-
Multiply Accumulator
-
Programmable Activation Function
-
Multi-layer control sequencer
-
Sparse network support
-
Patented Technology
Green Mountain Semiconductor has several patents granted and pending in the field of commodity memory architecture, error correction code and in-memory high-parallel data processing.
